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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676A/678A/680A/682 Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD676A BD678A VCBO HAN INC Collector-emitter voltage Emitter -base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature Collector-base voltage BD680A BD682 GE S Open emitter EMIC OND TOR UC VALUE -45 -60 -80 -100 -45 -60 UNIT V BD676A BD678A Open base BD680A VCEO V -80 -100 BD682 VEBO IC ICM IB PC Tj Tstg Open collector -5 -4 -6 -0.1 V A A A W ae ae TC=25ae 40 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD676A BD678A BD676A/678A/680A/682 SYMBOL CONDITIONS MIN -45 -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 BD680A BD682 BD676A/678A/680A BD682 BD676A/678A/680A BD682 IC=-2A; IB=-40mA IC=-1.5A; IB=-30mA IC=-2A ; VCE=-3V -2.5 IC=-1.5A ; VCE=-3V VCB=rated BVCEO; IE=0 Ta=100 ae VCE=1/2rated BVCEO; IB=0 VEB=-5V; IC=0 -80 -100 -2.8 V VCEsat Collector-emitter saturation voltage V -2.5 VBE(on) Emitter-base voltage Collector cut-off current Collector cut-off current V ICBO ICEO IEBO BD676A/678A/680A BD682 Emitter cut-off current hFE DC current gain HAN INC SEM GE IC=-2A ; VCE=-3V OND IC TOR UC -0.5 -2.0 -0.2 -2.0 mA mA mA 750 IC=-1.5A ; VCE=-3V 750 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD676A/678A/680A/682 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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